| 摘要 |
PURPOSE: A production method for the thin film transistor substrate of polycrystalline silicon is provided to simplify the production process of the substrate by forming an offset area without adding an additional process as forming an LDD area and a source and drain area in a single process. CONSTITUTION: To produce the thin film transistor substrate of a polycrystalline silicon, a polycrystalline silicon layer(1) on an insulating substrate(1). Then, a first metal and a second metal layer are sequentially formed, and a photosensitive film pattern for a gate electrode is formed on the second metal layer by spreading photosensitive material to be exposed and developed. And, a rim part having a shallow thickness of a photosensitive film(6), an ITO(indium-tin-oxide), the second metal layer, the first metal layer, and the gate insulating layer are continuously etched back to form the first metal pattern. After removing the photosensitive film pattern, ion is doped. Then, an isolation gate insulation layer(313) is formed by removing the gate insulation layer, which is remained on a source and a drain area(213,214) and an LDD area(212) by a dry type. The entire second metal pattern(51) is removed by etching with ITO etching fluid, and an interlayer dielectric(8) is deposited. A contact hole(C1,C2) is formed for revealing the source and the drain area, and a source and a drain electrode(91,92) for formed to be contacted with the source and the drain area through the contact hole. Therefore, a thin film transistor LCD of polycrystalline silicon is obtained.
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