| 摘要 |
PURPOSE: A nonvolatile memory device is provided to improve the integration of a memory cell by reducing the depth of a highly doped source and to prevent deterioration of the characteristic of a first insulation film. CONSTITUTION: A nonvolatile memory device is composed of a first insulation film(700) on a semiconductor substrate(300), a floating gate(340), a second insulation film(350) and a control gate(360), a drain area(310) on the surface of the semiconductor substrate, a lightly doped source(602), and a highly doped source(600). Herein, the highly doped source is formed to be shallower than the drain area while not being overlapped by the floating gate. Therefore, the integration of the memory cell is improved, and the characteristic of the memory cell is improved by reducing the trap of electrons in the first insulation film. Herein, the first insulating film is formed between the floating gate and the lightly doped source.
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