| 摘要 |
1,045,478. Semi-conductor lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 14, 1963 [Oct. 15, 1962], No. 40363/63. Heading H1K. [Also in Division H3] Charge carriers are injected into a body of direct band gap material at a rate sufficient to stimulate emission of radiation due to recombination of the carriers. A semi-conductor body consists of GaAs with a PN junction formed by diffusion between zinc and tellurium doped regions. A gold and antimony plated washer is attached to one side of the device and an indium contact is applied to the other side. The device is operated at low temperatures, e.g. 25‹ K or 77‹ K. Details of many such devices, and their performance, are given in the Specification, together with several modifications. In one device, cadmium replaces zinc as a dopant, a nickel washer soldered with tin being used as one contact, and an InGaAs alloy as the other. A second device uses a gold-plated MoHg washer as one contact and tin or evaporated gold as the other. A further device is undoped on one side of the junction. Other suitable semi-conductor materials include GaSb, InSb, InP, InAs and GaAs-GaP alloys. Charge carrier injection may be achieved by using a magnetic rectifier structure or a semi-conductor-metal junction instead of a PN junction. |
