CELL MASK OF SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A cell mask of a semiconductor device is provided to easily form a fine pattern or a connection between patterns. CONSTITUTION: An SOI(semiconductor-on-insulator) wafer having a first semiconductor substrate(31), an insulating film, and a second semiconductor substrate(33) comprises of: a first etched region etched in a regular length to be remained a certain thickness in the second semiconductor substrate; a second etched region etched until exposing the insulating film with a narrower length than the first etched region; and the first semiconductor substrate and the insulating film arranged with the first etched region and etched to contact with the second semiconductor substrate. The thickness of the second semiconductor substrate is 20 micrometers. The silicon substrate is easily etched with the depth of 20 micrometers by using a photo process having a different size of pattern, and a line pattern connected is formed by compensating a proximity effect when the line pattern is formed by forming a stairs-typed mask lengthwise the pattern.