| 摘要 |
PURPOSE: A method for producing a semiconductor device is provided to simplify a producing process from isolation to formation of a plug, and to improve a stabilization of electrical characteristic. CONSTITUTION: A buffer oxide film(22) is formed on a upper part of a semiconductor substrate(21), a well(23) is formed by implanting a dopant ion, and a nitride film is deposited on a upper part of the buffer oxide film(22). An oxide film(25) is deposited in the entire upper face of the semiconductor substrate(21), and a trench is formed in a field area by flattening after etching parts of the nitride film(24), the buffer oxide film(22), and the semiconductor substrate(21). The oxide film(25) filled in the nitride film and the trench of an area forming a gate is etched after forming an ion implanting area(26) by implanting the dopant ion on the semiconductor substrate(21) formed the trench. A laminated structure of a polysilicon(27), a WSix film(28) and a cap oxide film(29) is formed and a gate is formed by flattening through a chemical mechanical polishing process after performing a thermal oxidizing process in the semiconductor substrate(21). A source/drain area is formed by implanting the dopant ion on the semiconductor substrate(21) after removing the nitride film, and a side wall(30) of the gate and a plug(31) are formed on the entire upper face of the semiconductor substrate(21).
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