| 摘要 |
PURPOSE: A method is provided to form a gate film without stress when depositing a gate material after forming an element isolation film with in a PSL(poly-si spacer local LOCOS) method. CONSTITUTION: A first pad oxide film and an oxidation protective film are formed on a semiconductor substrate for exposing the first pad oxide film of an element isolation region by removing the oxidation protective film of the isolation region. And, the first oxide film is eliminated for growing a second pad oxide film in the region without the first pad oxide film. A polycrystalline silicon spacer is formed on the side wall of the oxidation protective film, and the surface of the substrate is CMP(chemical mechanical polishing) processed after forming an element isolation film. Then, an isolation film with flattened surface is formed by flattening the surface of the element isolation film, and the final element isolation film is formed after removing the oxidation protective film and the pad oxide film. Moreover, a polycrystalline silicon film(44) and a silicide film(46) are formed on the front surface of the substrate after forming a gate oxide film(42). Therefore, a semiconductor device having an element isolation film is completed.
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