| 摘要 |
PURPOSE: A production method for an electrode is provided to produce a pin typed storage electrode without using an oxidation film spacer for increasing a capacitance. CONSTITUTION: To produce an electrode, a polysilicon layer(30) and a photoresist rim(35) for a storage electrode are sequentially formed on an oxidation film(20), which is formed on a substrate(10). Then, the polysilicon layer and the photoresist film are exposed by overdosing using a phase shift mask having an established permeability. And, a development is performed by using a side lobe development for etching back the result to form a storage electrode. Therefore, a pin typed storage poly-electrode is produced simply without operating an oxide deposition, a spacer etching, and a wet typed etching.
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