| 摘要 |
PURPOSE: A device and a method for forming an aluminum oxide film of a wafer are provided to operate a pretreatment and a post-treatment at the same time for improving reliability on a product and for mass-producing by automating the forming process of the aluminum oxide film. CONSTITUTION: A wafer(1) stored in a cassette box(210) is transferred to an aligned(220) by a robot installed in a transferring chamber(200) for the aligned to transfer the wafer to a vacuum cassette module(140). And the wafer is transferred to a hydrogen annealing module(100) for eliminating an oxide film formed on the wafer. Then, the robot transfers the wafer to a plasma cleaning module(110) for eliminating the remained oxide film, and the robot transfers the wafer to a forming module(120) of aluminum oxide film forming an aluminum oxide film on the wafer in an epitaxial method of atom layer. And then, the wafer is transferred to a thermal treating module(130) for the aluminum oxide film to have increased density and stable crystalline structure. And then, the wafer is transferred to a cooling chamber(150) for cooling to complete the forming process of the aluminum oxide film. Therefore, the completed wafer is stored in the other cassette box(230).
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