| 摘要 |
PURPOSE: A method for forming a silicide is provided to prevent a loss of an oxide film around a trench region, and to secure a size forming a silicide layer. CONSTITUTION: A forming method of silicide is equipped processes of: forming a well(12), a trench region(13) and a gate(14) on a semiconductor substrate(11); depositing an isolating film in upper a front face of the semiconductor substrate after doping a dopant ion of low concentration on the well with the gate and the trench region as a mask, and forming a side wall (17) in the gate by over-etching until a region doped the dopant ion of low concentration; forming a polysilicon side wall around both sides of the region doped the dopant ion of low concentration by depositing and etching back a polysilicon in the upper front face of the semiconductor substrate; forming a source/drain by doping a dopant ion of high concentration on the well with the gate, the trench region, and the side wall as the mask; and forming a silicide layer(19) on the polysilicon side wall and the source/drain through a self-aligned silicide process. A deterioration of a junction leakage and of an insulation characteristic is prevented by cutting the form of the silicide layer until an exposed region of the semiconductor substrate according to the loss of the oxide film around the trench region, and a size forming the silicide layer is secured in a high integrated device.
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