发明名称 LASER SCREEN OF SEMICONDUCTOR FOR CRT
摘要 PURPOSE: A laser screen for a CRT(Cathode Ray Tube) is provided to increase light efficiency by remarkably reducing a light absorption rate in a passive area while solving difficulty in production. CONSTITUTION: A laser screen for a CRT is composed of a partially permeable mirror(100), a passive area, a semiconductor member(125), and a laser resonator. Herein, the passive area is formed with a dielectric material, and the semiconductor member is formed with an active area(120), which is formed with semiconductor compounds of III-V groups or II-VI groups. Then, the laser resonator is consisted of reflection mirrors(130) attached on a transparent substrate(200) by an adhesive layer(300). Herein, the active area of the semiconductor member is grown as the form of monocrystalline line of the semiconductor compound of III-V groups or II-VI groups to form an MQW(Multi-Quantum Well) structure or a Super Lattice structure. AlGaAs/GaAs of III-V group compounds is used as active area, and InP/InGaAsP is used as II-V group compounds. Moreover, the thickness of the active area is restricted within 1-10 micrometers.
申请公布号 KR20000031075(A) 申请公布日期 2000.06.05
申请号 KR19980046937 申请日期 1998.11.03
申请人 SAMSUNG SDI CO., LTD. 发明人 SONG, CHEONG DAM
分类号 H01J9/20;(IPC1-7):H01J9/20 主分类号 H01J9/20
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