| 摘要 |
PURPOSE: A structure of a semiconductor device is provided to have more process margin for the irradiation energy of a laser beam due to cutting a fuse without damaging the adjacent fuses even though increasing a spot size and the irradiation energy of the laser beam. CONSTITUTION: An interlayer dielectric(20) is stacked on the main memory cell area and on the redundancy memory cell area of a semiconductor substrate(10), and final metal wires(30) are aligned on the interlayer dielectric. And, a first protective film(40) is stacked on the interlayer dielectric including metal wires to protect the metal wires. Herein, the metal wires are consisted of a Ti/TiN layer(31) for a fuse as a lower layer, an aluminum layer(33) as an intermediate layer, and a TiN layer(35) for a cap as an upper layer. Then, the metal wires are constituted as a single structure of Ti/TiN layers(31a,31b,31c,31d) at the opening of the first protective film formed on a part of the redundancy memory cell area. Moreover, when a laser beam is irradiated to a fuse for relieving a defect, a second protective film(70) is stacked on the first protective film(40) including the Ti/TiN layers to prevent damage on the adjacent fuses. |
