发明名称 VERTICAL FURNACE HAVING GAS SUPPLY NOZZLE HAVING PIECE FOR PREVENTING BENDING
摘要 PURPOSE: A vertical furnace for the preparation of a semiconductor device is provided to prevent the bending of a nozzle installed to supply reacting gas needed for process into an inner tube. CONSTITUTION: A vertical furnace is composed of an inner tube(120) to receive a boat(110) loading a wafer for the preparation of a semiconductor device, an outer tube(140) installed by surrounding the inner tube and a nozzle(130) extended near to the upper end portion(120A) of the inner tube in the same direction as the extended direction of the inner tube in the inner tube and to supply reacting gas needed for the semiconductor device preparation process into the inner tube. The nozzle is extended in a pipe shape having 500-3000mm of length in the inner tube. The nozzle is combined to the upper end portion of the nozzle and has a bending preventing piece. The bending preventing piece(130A) has a combining portion(130B) combined to the upper end portion of the inner tube to install the nozzle while keeping a certain distance(D) from the inner tube.
申请公布号 KR20000031902(A) 申请公布日期 2000.06.05
申请号 KR19980048164 申请日期 1998.11.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO, HO GEUN;BAEK, SEUNG CHANG
分类号 F27B1/10;(IPC1-7):F27B1/10 主分类号 F27B1/10
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