| 摘要 |
PURPOSE: A method for forming a contact in a semiconductor device is provided to improve the resistance of a poly-2-contact formed on the upper part of a gate electrode while not damaging a silicon substrate. CONSTITUTION: A polysilicon(20), a tungsten silicide layer(30), and an arc layer(40) for formed on a semiconductor substrate(10) for depositing a first interlayer insulating film(50). And, a photosensitive film is sprayed on the entire surface of a wafer to be patterned, and the photosensitive film is dry etched for forming a poly-2 contact. Then, the photosensitive film is eliminated for cleaning. A photosensitive film(60) is sprayed on the entire surface of the wafer for a second time to be etched back. Therefore, a poly-2 contact(2) formed on a silicon substrate contains the photosensitive film after etching back. Then, the poly-2 contact is Ar sputtered including N2 gas for eliminating a tungsten oxide film. Moreover, the photosensitive film remained on the silicon substrate is eliminated for preventing the silicon substrate from being damaged. In addition, polysilicon is deposited for forming the contact of a semiconductor device.
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