发明名称 Method of reducing spiral defects by adding an isopropyl alcohol rinse step before depositing sog
摘要 A method of forming an interlevel dielectric slayer of spin-on-glass is described which avoids spiral defects from occurring in the layer of spin-on-glass. Before the spin-on-glass is deposited and with the wafer spinning at a low angular velocity a first volume of isopropyl alcohol is deposited on the wafer. The wafer continues to spin at the low angular velocity for a short time. With the wafer continuing to spin at the low angular velocity a second volume, less than the first volume, of spin-on-glass is deposited on the wafer. The wafer continues to spin at the low angular velocity for a short time and then is spun at a high angular velocity for a longer time. The wafer is then removed from the apparatus used to deposit the spin-on-glass and processing of the wafer continues. Spiral defects in the layer of spin-on-glass are avoided.
申请公布号 US6071831(A) 申请公布日期 2000.06.06
申请号 US19980135042 申请日期 1998.08.17
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 CHIANG, CHEN-CHIA;LIN, CHUNG-AN
分类号 H01L21/00;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 主分类号 H01L21/00
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