发明名称 |
Method of reducing spiral defects by adding an isopropyl alcohol rinse step before depositing sog |
摘要 |
A method of forming an interlevel dielectric slayer of spin-on-glass is described which avoids spiral defects from occurring in the layer of spin-on-glass. Before the spin-on-glass is deposited and with the wafer spinning at a low angular velocity a first volume of isopropyl alcohol is deposited on the wafer. The wafer continues to spin at the low angular velocity for a short time. With the wafer continuing to spin at the low angular velocity a second volume, less than the first volume, of spin-on-glass is deposited on the wafer. The wafer continues to spin at the low angular velocity for a short time and then is spun at a high angular velocity for a longer time. The wafer is then removed from the apparatus used to deposit the spin-on-glass and processing of the wafer continues. Spiral defects in the layer of spin-on-glass are avoided.
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申请公布号 |
US6071831(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19980135042 |
申请日期 |
1998.08.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHIANG, CHEN-CHIA;LIN, CHUNG-AN |
分类号 |
H01L21/00;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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