发明名称 |
Semiconductor device including lateral MOS element |
摘要 |
Disclosed is a semiconductor device including a lateral MOS element which comprises a p-type silicon substrate; a first semiconductor layer of an n-type constituting a drift region; a second semiconductor layer of the p-type selectively provided in the first semiconductor layer, and constituting a body region, in which a channel region is partially formed; a third semiconductor layer of the n-type selectively provided in a surface of the second semiconductor layer, and constituting a source region; a fourth semiconductor layer of the n-type provided in the first semiconductor layer, and constituting a drain region; and a trench gate. The trench gate is constructed such that a trench formed in the first semiconductor layer is filled with a gate electrode with an insulating film interposed therebetween. The trench gate is formed such that at least a bottom thereof is in contact with the semiconductor substrate. The semiconductor device of the present invention prevents a high electric field at a corner of the bottom of the trench gate, thus achieving its high breakdown voltage.
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申请公布号 |
US6072215(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19990275868 |
申请日期 |
1999.03.25 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
发明人 |
KAWAJI, SACHIKO;KODAMA, MASAHITO;SUZUKI, TAKASHI;UESUGI, TSUTOMU |
分类号 |
H01L21/331;H01L21/336;H01L29/06;H01L29/417;H01L29/423;H01L29/739;H01L29/78;H01L29/786;(IPC1-7):H01L29/76;H01L31/113 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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