| 摘要 |
There is provided a method of fabricating a lateral MOS transistor, including the steps of (a) forming a gate oxide film on a semiconductor substrate, (b) forming a gate electrode on the gate oxide film, (c) forming a mask covering one of regions of the semiconductor substrate adjacent to the gate electrode, (d) ion-implanting the semiconductor substrate with impurities having a first electrical conductivity as the semiconductor substrate is being rotated around the gate electrode, at an angle relative to the semiconductor substrate to form a channel region in an uncovered region, (e) ion-implanting the semiconductor substrate with impurities having a second electrical conductivity around the gate electrode in self-aligned manner to thereby form source and drain regions. It is preferable that ion-implantation in the step (d) is carried out in the desired number of times. The above mentioned method makes it possible to form a channel region having a steep impurities-concentration profile just below the gate electrode, ensuring that performances of MOS transistor are improved, and that other MOS transistors can be formed on the same semiconductor substrate.
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