| 摘要 |
The invention relates to a dynamic sense amplifier, particularly for semiconductor memory devices of the EPROM, EEPROM and Flash-EPROM types, which includes a virtual ground sense circuit having a pair of output nodes, an equilibration device for equalizing the voltages at the output nodes, and respective reference and matrix circuit legs associated with the output nodes and being led to respective input terminals, the sense amplifier also includes a bias circuit portion for biasing the input terminals. The inventive amplifier distinguishes itself in that the sense circuit and equilibration device are driven by respective signals to generate a predetermined differential voltage between the output nodes before the sense circuit is activated.
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