A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.
申请公布号
WO0031791(A1)
申请公布日期
2000.06.02
申请号
WO1999US27683
申请日期
1999.11.22
申请人
INFINEON TECHNOLOGIES AG;ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
DESROCHERS, DEBRA, A.;HENDRIX, BRYAN, C.;ROEDER, JEFFREY, F.;HINTERMAIER, FRANK, S.
