发明名称 ETCHING SOLUTION, ETCHED ARTICLE AND METHOD FOR ETCHED ARTICLE
摘要 <p>An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100Å/min or less at 25 °C, and an etching rate ratio : etching rate for BPSG / etching rate for a thermally oxidized film (THOX) of 1.5 or less.</p>
申请公布号 WO2000031786(P1) 申请公布日期 2000.06.02
申请号 JP1999006503 申请日期 1999.11.22
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址