| 摘要 |
A method for forming a transistor. The method includes providing a wafer having a semiconductor active device layer in one surface of the wafer, a silicon support layer in a second surface of the wafer, and an insulating layer therebetween. Doped regions are formed in the transistor device layer. A sacrificial support is disposed on, and bonded to, the first surface of the wafer. The silicon support and the insulating layer are selectively etched while the sacrificial support provides structural integrity to the transistor device layer. The sacrificial support is selectively removed. The selective etching of the silicon support layer and the insulating layer exposes a surface of the active device layer and a heat conductive layer is formed on the exposed surface of the active device layer. The sacrificial support is selectively removed after forming the heat conductive layer. A plurality of transistors is formed in the active device layer and such transistors are separated into individual transistors subsequent to the forming of the heat conductive layer and removal of the sacrificial support. With such method, a thin active device layer can be formed and processed using the sacrificial support as a mechanical handing means. |
