| 摘要 |
<p>The invention concerns a method for epitaxial growth of a material on a first solid material (100) from a material melting on the first material (100), characterised in that it comprises: a step (a) of growth of the first material (100) on a substrate (10), made of a second material (200); a step (d, d') whereby crystalline tips of the first material (100) are made to grow from the contact surface between the first material (100) and the melting material; a step (f, f') which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.</p> |
