| 摘要 |
According to the invention, a magnetoresistive element has a first ferromagnetic layer element (1), a non-magnetic layer element (2) and a second ferromagnetic layer element (3) and is connected between a first connection (5) and a second connection (7). A barrier layer (4, 6) is provided between the first ferromagnetic layer element (1) and the first connection (5) as well as between the second ferromagnetic layer element (2) and the second connection (7). Said barrier layers (4, 6) prevent diffusion between the connections and the ferromagnetic layer elements (1, 3). The magnetoresistive element can be used as a storage element and as well as a sensor element. |
