| 摘要 |
<p>A semiconductor device comprising a first region of first conductivity type, a second region of second conductivity type formed thereon, a third region of first conductivity type formed on the second region, a fourth region of second conductivity type formed on the third region, and a low resistance region for suppressing spreading of a depletion layer in the second region toward the first region, wherein a recombination defect region is formed in the low resistance region forming region by implanting nonimpurity ions and the low resistance region is formed by lowering the resistance of the recombination defect region through heat treatment in order to improve trade-off between ON voltage and switching off loss and to form a PT type IGBT element even when using a single crystal wafer, in an insulated gate bipolar transistor suitable as a power switching element.</p> |
