发明名称 |
Substrate-fluorescent LED |
摘要 |
A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The substrate absorbs a part of the blue or green light and makes fluorescence of a longer wavelength. Neutral color light or white light is emitted from the LED. The fluorescent substrate is n-AlGaAs(Si dope), GaP(Zn+O dope), ZnSe (Cu+I, Ag+I, Al+I dope), GaN (O.C.Va(N) dope) or so. <IMAGE> |
申请公布号 |
EP0977278(A3) |
申请公布日期 |
2000.05.31 |
申请号 |
EP19990114026 |
申请日期 |
1999.07.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MATSUBARA, HIDEKI;TAKEBE, TOSHIHIKO;MOTOKI, KENSAKU |
分类号 |
H01L33/50 |
主分类号 |
H01L33/50 |
代理机构 |
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地址 |
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