BOOSTER CIRCUIT, VOLTAGE GENERATOR CIRCUIT AND SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To improve the boost potential rise characteristic and stabilize at a set voltage in a booster circuit for boosting. SOLUTION: A first booster cell group 101 of i(i>=1) booster cells CP1-CPi multiply connected in series exists, and, between an output node 111 thereof and an output node 110 of a booster circuit 100, a second booster cell group 102 of m-1(m-1>=1) booster cells CP'i+1-CP'n multiply connected in series and a second booster cell group 103 of m-1(m-1>=1) booster cells CP"i+1-CP"n multiply connected in series are connected in parallel. The power of the booster circuit is switched according to the output potential to reduce the potential change at a set potential.