| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a ridge-type semiconductor element of first response by forming a third insulating film in such a pattern mode as dry-etch considering resistance in the horizontal direction. SOLUTION: A ridge comprising an active layer, a clad layer, a current block layer, and a contact layer is formed in a stripe pattern form on a semiconductor substrate 1, and after an organic dielectric layer is formed between the stripe pattern of a ridge 12, an insulation is formed in such mode as to comprise a basic pattern (a) and an etching protective part (b) protruding along the ridge so that an over etching occurring along the ridge 12 is avoided. After the organic dielectrics layer is oxygen-etched with that as a mask, the insulation film is removed and a rear-surface electrode is formed on a surface on the ridge 12 and the organic dielectric layer, where no surface electrode and the ridge 12 of semiconductor substrate are formed, and then a part comprising the ridge 12 and the surface electrode is separated by an element border line. The element border line corresponds to the cleavage plane of the semiconductor substrate 1.
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