| 摘要 |
PROBLEM TO BE SOLVED: To form a curvature at the upper end of a hole formed in a semiconductor substrate without forming difference in levels even when amount of oxidation is small, by oxidizing the hole formed in the semiconductor substrate within a specified range of partial pressure of oxygen, filling the hole with an insulating film and removing it and removing an antioxidant film and a pad oxide film which are formed on the circuit forming surface of the semiconductor substrate. SOLUTION: A shallow hole is made in the surface of a silicon substrate 1 with a mask of silicon nitride film 12 in such a way that its side walls form a specified angle with the silicon substrate. After removing a part of photoresist 13, a pad oxide film 2 is backed and the surface of the silicon substrate 1 is thermally oxidized by about 10 nm in an atmosphere of dry oxidation at an oxidation temperature t ( deg.C) within a range of partial pressure rate C expressed as 0<C<=0.88 t-924 to form a thermally oxidized film 5 in the hole. An insulating film such as silicon oxide film or the like is deposited by CVD or the like for filling the hole. Also, after deposition of the insulating film 6 filling the hole, the silicon substrate 1 is oxidized in an atmosphere of annealing or oxidation at about 1000-1100 deg.C for the sake of consolidation. The silicon nitride film 12 and the pad oxide film 2 are removed and an embedded construction is completed.
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