| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent intrusion of the water in the outside air without increasing the number of manufacturing processes and has superior characteristics even when the device uses an interlayer insulating film made of a material having a low dielectric constant. SOLUTION: Barrier layers 11 are simultaneously formed with multilayered wiring layer sections 5, 6, and 7 between the sections 5, 6, and 7 and a dicing line section 100 on a silicon substrate, by forming one barrier layer 11a together with the first metallic wiring 5 and the other barrier layers 11b and 11c on the barrier layer 11a, together with a connecting hole section 7 and the second wiring layer 6.</p> |
