发明名称 Slurry filling a recess formed during semiconductor fabrication
摘要 The present invention advantageously provides a method for filling a recess with a slurry that exhibits electrical properties similar to those of the structure which has the recess. The topological surface that includes the recess may be placed adjacent to a pad on which the slurry is disposed. The pad may be rotated to force the slurry into the recess. After the slurry is densely packed into the recess, the slurry may be cleaned from the topological surface exclusive of the recess. The slurry may be heated in order to remove the liquid portion of the slurry. The resulting topological surface is planar since a recess no longer exists therein. The technique hereof may be especially useful for filling a recess that forms in the surface of a plug or in the surface of a fill dielectric disposed within a trench. Such recesses may form as a result of CMP or etchback.
申请公布号 US6069085(A) 申请公布日期 2000.05.30
申请号 US19970899111 申请日期 1997.07.23
申请人 LSI LOGIC CORPORATION 发明人 BERMAN, MICHAEL J.
分类号 H01L21/321;(IPC1-7):H01L21/463 主分类号 H01L21/321
代理机构 代理人
主权项
地址