| 摘要 |
PROBLEM TO BE SOLVED: To perfectly read a signal charge accumulated in a signal storage part using an MOS transistor of low-voltage drive. SOLUTION: Related to an MOS type solid state imaging device, an n-type signal storage part 22 provided inside a p-type substrate 21, a p+-type surface shield layer 23 provided, above the signal storage part 22, on the substrate surface, a gate electrode 25 provided, while adjoining one end of the signal storage part 22, at the upper part of the substrate, an n-type drain region 24 which is provided at the end opposite to the signal storage part 22 of the gate electrode 25 while adjoining it, and a p+-type punch through stopper provided at the lower part of the drain region 24, are provided. Here, the signal storage part 22 and the gate electrode 25 are partially overlapped in the substrate surface direction, and the surface shield layer 23 is receded from the signal storage part 22 in direction opposite to the gate electrode 25.
|
