MANUFACTURE OF SCHOTTKY JUNCTION SEMICONDUCTOR DIODE DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture in a small number of processes by forming a metal electrode for anode continuously extending between an n-type semiconductor layer for cathode and a p-type poly-crystal semiconductor layer for leakage current stopping electrode onto them so that a Schottky junction is formed between the n-type semiconductor layer for cathode and the metal electrode for anode. SOLUTION: A p-type poly-crystal semiconductor layer 27' for leakage current stopping electrode is buried and formed in a groove 8 of an n-type semiconductor layer 3 for cathode through a fourth insulating film 24. Then a metal electrode 28 for anode extending between a region 3' which is demarcated by the groove 8 of the n-type semiconductor layer 3 for cathode and the p-type poly-crystal semiconductor layer 27' for leakage current stopping electrode is, under the condition where nothing is formed on the region 3', formed on the region 3' and the p-type poly-crystal semiconductor layer 27' for leakage current stopping electrode, so that a Schottky junction is formed between the electrode 28 and the region 3' which is demarcated by the groove 8 of the n-type semiconductor layer 3 for cathode. Thereby a device is manufactured in a small number of processes.