| 摘要 |
PROBLEM TO BE SOLVED: To suppress occurrence of non-volatile substance for faster etching by, related to dry etching of an indium tin oxide which uses hydrogen iodide gas, allowing a gas linear velocity to be a specific value or above in a specified pressure range between an application electrode which holds a substrate and a counter electrode comprising a gas blowing port. SOLUTION: Related to dry etching for an indium tin oxide(ITO) which uses a gas comprising hydrogen iodide(HI), pressure is 0.1-100 Pa, with high-frequency parallel flat-plate capacitance coupling discharge electrode, an application electrode which holds a substrate with an ITO, and a counter electrode comprising a blowing port which supplies hydrogen iodide provided. A gas linear velocity S/V calculated from a plane formed by connecting periphery of counter application electrode and counter pole, in short the outer circumference area S of inter-electrode space, and a volume flow-rate V in vacuum of a gas comprising the hydrogen iodide released from it is at least 0.8 m/second. Fast etching is performed while non-volatile substance is suppressed.
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