MANUFACTURE OF SILICON CARBIDE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide surface which is electrically excellent with less defect by removing at least a part of the surface of silicon carbide formed on a substrate through chemical vapor deposition(CVD) by at least 500 nm. SOLUTION: An excessive surface 22, of bad crystalinity and comprising defect, which is deposited with a remaining gas in a temperature-falling process from a crystal growth temperature at completion of growth of silicon carbide is removed, and a Schottky electrode 25 is formed on a silicon carbide 24 with reduced defect. The surface of a substrate B is etched with a reactive ion etching(RIE) device. The mixed gas of carbon tetrafluoride (CF4) and oxygen (O2) is used as gas species.