| 摘要 |
PROBLEM TO BE SOLVED: To orient the tungsten silicide crystals of a silicon-rich tungsten silicide layer in the same direction by adding a gas containing phosphorus atoms to a source gas in the first step of forming the silicide layer. SOLUTION: A silicon oxide film 2 which becomes a gate insulating film is formed on a silicon substrate 1, and a polysilicon layer 3 is formed on the film 2. Then a tungsten silicide layer 4 is formed on the layer 3 in such a state that the layer 4 is divided into a lower layer 5 and an upper layer 6. The lower layer 5 is made of a silicon-rich tungsten silicide by adding a gas containing phosphorus atoms to a source gas, such as the phosphine gas, etc., and the upper layer 6 is made of a tungsten-rich tungsten silicide. Therefore, the crystals of the layer 4 can be oriented in the same direction.
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