| 摘要 |
PROBLEM TO BE SOLVED: To lessen the dispersion of surface processing within a wafer face, in a device which contrives the increase of hydrophobicity prior to applying resist on a semiconductor wafer, or a device which gelatinizes the applied film being the material of an insulating film. SOLUTION: Processing for hydrophobicity is performed by repeating the intermittent supply and stoppage of HMDS(hexamethyl disilazane) gas, and reopening the processing for hydrophobicity after restoring the temperature of the wafer section which has dropped together with the progress of the processing for hydrophobicity by the supply of HMDS gas, during the stop period of the processing for hydrophobicity by the stoppage of supply of HMDS gas, thereby restraining the temperature of the section where the gas hits of the wafer W from remarkably dropping. Moreover, also in the cafe of gelatinizing the applied film with ammonium gas, it is performed in the same way. In this case, the control of the supply and stoppage of the gas may be performed with the specified timing or may be performed, based on the pressure within a processing container. |
