| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide layer of high capacitance and small leakage current on a semiconductor substrate by processing a GaAs semiconductor as to align in purity at atom level, forming an oxide layer on the surface with alignment in purity at substantially atom level, and forming a metal contact. SOLUTION: An oriented flat-surface single crystal semiconductor substrate 140 is selected among a semiconductor based on GaSa and that based GaN. An oxide layer 145 formed on the semiconductor substrate 140 comprises a cubic crystal structure of Mn2O3 form while X is selected from an oxide comprising Y and composition of X2O3 of rare earth element. On the semiconductor substrate 140, Gd2O3 is epitaxial-grown in single crystal and single domain mode. Related to the acquired single crystal oxide layer 145, a leakage current is less even with a very thin layer, allowing it to be used as a gate oxide film.
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