发明名称 OPTICAL CAVITY IMPROVED INFRARED DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a quantum well infrared radiation absorbing photoconductor having good efficiency with respect to an incident infrared radiation. SOLUTION: This infrared detector array 150 has a plurality of detector pixel structures 154 to 164, and each of the structures has a plurality of quantum well infrared radiation absorbing photoconductor (QWIP) elements, which are long extended. Groups consisting of the QWIP elements are provided at intervals and are formed into diffration gratings with respect to the infrared radiations received. Vertical contacts 186 are respectively provided on the surfaces, which face opposite the long extended elements of the QWIPs and under the bottoms, which face opposite the long extended elements of the QWIPs, a current is made to flow through the elements in such a way as to cross the axes of the elements and a necessary bias voltage is applied to the elements. An optical cavity improved covering can be applied on the surfaces of the elements. Images corresponding to the received infrared radiations are generated by a grouped signal from the detector pixel structures.
申请公布号 JP2000150926(A) 申请公布日期 2000.05.30
申请号 JP19990251124 申请日期 1999.09.06
申请人 LOCKHEED MARTIN CORP 发明人 DODD MARK A
分类号 H01L31/0264;G01J1/02;H01L27/14;H01L27/146;(IPC1-7):H01L31/026 主分类号 H01L31/0264
代理机构 代理人
主权项
地址