| 摘要 |
PROBLEM TO BE SOLVED: To provide an inter-line transfer type solid-state imaging device, together with a method for manufacturing it, of wide dynamic range, high sensitivity, and low smear wherein the dispersion in signal-reading characteristics from a photo-electric conversion part to a charge transfer part is less while a dark current and white blemish occurring at the photoelectric transfer part is suppressed. SOLUTION: A charge transfer electrode 510 also acting as a reading electrode for a signal charge is so formed that a region 518 on a photoelectric transfer part and a region 519 dividing a gate electrode film in row direction overlap on a charge transfer electrode 509, a photo-electric part 506 ion-implants an n-type impurities at high energy (at least 200 keV) with a photoresist used when a gate electrode film in the region 518 on the photoelectric transfer part is etched for removal used as a mask, and a P-type region 511, after the photoresist is stripped off, inclination-ion-implants a p-type impurities at a low energy (10-100 keV) with such gate electrode film on the photoelectric conversion part as the region 518 is removed as a mask.
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