| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element, with a low operation voltage, which comprises a confinement structure with an Al oxide layer wherein the size of confinement structure is controlled surely. SOLUTION: A semiconductor laser element 20 is provided with a laminated structure comprising an n-InP clad layer 22, an SCH-MQW active layer 23, a p-InP first clad layer 24, an Al oxide layer 29, a p-InP protective layer 26, a p-InP second clad layer 27, and a p-GaInAs contact layer 28 which are sequentially formed on an n-InP substrate 21. Of the laminated structure, the Al oxide layer, p-InP protective layer, p-InP second clad layer, and a contact layer are formed as a stripe-like ridge 37. For the Al oxide layer and p-InP protective layer, a part of them is so removed in a channel as to form an electric opening part 35 at the center in the width direction of ridge, and the Al oxide layer is obtained by selectively oxidizing the Al of the Al1nAs layer.
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