| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of the dishing phenomena which occur when element isolating sections are flattened. SOLUTION: In element isolating areas 3, trenches 4 are formed into a silicon substrate 1 from the surface of the substrate 1. The forming areas of the trenches 4 are limited to prescribed widths from the peripheries of element areas 2 and the trenches 4 are not formed in the other sections of the element isolating areas 3. Consequently, the widths of the trenches 4 become narrower. Then insulating films 5 are formed on the substrate 1 so that the trenches 4 may be filled up with the films 5. The formed thickness of the films 5 are adjusted to the halves of the maximum widths of the trenches 4 or thinner. Therefore, the positions at which the parts of the insulating films 5 on both sides of the trenches 4 come into contact with each other and the heights of the insulating films 5 becomes the lowest become higher. Therefore, the occurrence of the dishing phenomena which occur when the element isolating areas 3 are flattened by CMP can be suppressed.
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