| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a semiconductor device of high reliability in high yield by a method wherein a buffer layer where a semiconductor element is joined is formed to be uniform in thickness. SOLUTION: A wiring pattern 14a is equipped with a lead 16 that is located on the one surface of a base film 15 extending outward from its periphery, a land 22 which is located on the other surface of the base film 15 and joined to an outer connection terminal, and a wiring section which electrically connects the lead 16 to the land 22. The wiring pattern 14a is provided to a wiring pattern film 14, the wiring pattern film 14 is joined to the electrode terminal forming surface of a semiconductor element 10, by making its surface where the wiring pattern 14a is formed confront the semiconductor element 10 through the intermediary of a buffer layer 34, and the lead 16 is electrically connected to the electrode terminal 18 provided to the electrode terminal forming surface of the semiconductor element 10 for the formation of a semiconductor device. In this case, the buffer layer 34 is composed of a flattening layer 30a which buries the wiring pattern 14a and flattens the one surface of the base film 15, and a buffer film layer 32a which is interposed between the flattening layer 30a and the electrode terminal forming surface of the semiconductor element 10.</p> |
