| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate a pattern distortion or positional fluctuation caused by changes in the film stress of an x-ray absorber pattern for excellence in positional precision by, related to an x-ray mask blank comprising an x-ray absorbing film for absorbing x-ray on an x-ray transmission film, allowing the x-ray absorbing film to contain tantalum, boron, and nitrogen. SOLUTION: On an x-ray transmission film 12, an x-ray absorbing film 13 is formed by a DC magnetron sputter method using a target of tantalum and boron and such gas wherein xenon is added with nitrogen as a sputter gas (d). With the substrate where the x-ray absorbing film is formed is annealed in an atmosphere, the film stress is changed in a stretching direction, to provide an x-rat absorbing film of low stress. The film composition of x-ray absorbing film is Ta:B:N=78:12:10 (atom % ratio). Then, on the x-ray absorbing film 13, a film comprising chromium and nitrogen is formed as an etching mask layer 14 by the DC magnetron sputtering method.</p> |
