| 摘要 |
The present invention relates to a method for prolonging life time of a dry etching chamber. A neck portion of the dry etching chamber, according to the present invention, is divided three sections, namely a first section, a second section and a third section in sequence from top of the neck portion to bottom thereof and each section has the same area. A first phase of a two-phase connection method, according to the present invention, then proceeds as the following. The first section is surrounded by an electrode coil connected to a rf power and the second section is surrounded by an electrode coil connected to the ground, not touching the electrode coil connected to the rf power, so that a plasma field within the dry etching chamber can be produced to perform a dry etching. The dry etching can be applied in production line until before life time of the first section comes to an end, i.e. about 95 % of life time of the dry etching chamber disclosed in prior art. After that, a second phase of the two-phase connection method, according to the present invention, proceeds as the following The second section is surrounded by the electrode coil connected to the rf power and the third section is surrounded by the electrode coil connected to the ground but not touching the electrode coil connected to the rf power, thereby performing another dry etching until life time of the second section comes to an end. Thus, life time of the dry etching chamber, according to the present invention, can be prolonged about one time compared with that of prior art.
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