发明名称 Semiconductor device fabrication method
摘要 A semiconductor device fabrication method for simple and high-reliability electrode formation capable of increasing a bond strength with solder when performing wiring through soldering. To form an electrode on a semiconductor substrate having a junction, the pattern of an aluminum paste electrode having an opening is formed and thereafter, the pattern of a silver-aluminum paste electrode or silver paste electrode is formed on the opening so as to overlap with the pattern of the electrode. Thereby, it is possible to increase the bond strength with solder of the silver-aluminum paste electrode or silver paste electrode on the opening without being alloyed with the aluminum paste electrode. It is also possible to improve the certainty of the electrical connection between the electrodes because the overlap between the metallic paste patterns is alloyed.
申请公布号 US6069065(A) 申请公布日期 2000.05.30
申请号 US19970936435 申请日期 1997.09.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ARIMOTO, SATOSHI;KAWAMA, YOSHITATSU
分类号 H01L21/288;H01L21/60;H01L23/485;H01L31/04;(IPC1-7):H01L21/44 主分类号 H01L21/288
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