| 摘要 |
PROBLEM TO BE SOLVED: To prevent degradation in permittivity due to oxygen defect caused by the oxidation reduction reaction of oxide high dielectric material or oxide ferroelectric material even when they are heated in the case where a covering film made of the oxide high dielectric material or oxide ferroelectric material is used to manufacture a semiconductor device. SOLUTION: Nitrogen ions are implanted into a substrate 1 made of single crystal, polycrystalline, or amorphous Si and the substrate 1 is heated, forming Si-N bonding as well as a Ta2O5 film 6 as a high dielectric film. Thus, the oxygen defect in the Ta2O5 film 6 can be prevented and high permittivity be kept therein. As a result, the film 6 can be made thick and leakage current be also suppressed. |
