| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture a semiconductor device where outer connection terminals are arranged in high density and which is provided with a large number of pins in high reliability. SOLUTION: This manufacturing method comprises a first process where a recess 52 is provided to the one surface of a metal material 40; a second process where a metal film 46 which is not dissolved in etchant that dissolves the metal material 40 is formed on the inner surface of the recess 52; a third process where the other surface of the metal material 40 is subjected to a thrusting process so as to make a region of the metal film 46 formed on the base of the recess 52 nearly flush with the one surface of the metal material 40, and the extension of the metal film 46 extending over the one surface of the metal material 40 is turned to a bonding part 42a; a fourth process where a semiconductor device is mounted on the one surface of the metal material 40 where the bonding part 42a is formed; a fifth process where the electrode of the semiconductor device is wire-bonded to the mounting part 42a; a sixth process, where the one surface of the metal material 40 where the semiconductor device, the bonding wires, and the metal film 46 are provided, is sealed up with resin; and a seventh process where the metal material 40 is removed by dissolution through an etching solution, and the metal film 46 formed on the inner surface of the recess 52 is exposed. |
