| 摘要 |
PROBLEM TO BE SOLVED: To get higher crystal property than the crystal property obtained in heat treatment, by introducing a catalyst element while controlling the quantity, and minimizing the quantity, and making the method the one high in productivity, in the manufacture of a film silicon semiconductor which has crystal property by the heat treatment under 600 deg.C using a catalyst element. SOLUTION: This is a semiconductor device which has a substrate 11 and a crystalline silicon film, and the substrate 11 has an insulating surface, and the above crystalline silicon film is provided above the above-mentioned insulating surface, and the above crystalline silicon film is one which is irradiated with a laser beam or strong light after bringing an element for accelerating crystallization or a compound 14 including that element into contact with the amorphous silicon film 12 and heating this amorphous silicon film 12 for crystallization. |
