| 摘要 |
PROBLEM TO BE SOLVED: To allow no contaminant to enter a wafer in plating by, related to a cathode electrode for wafer plating, forming a base layer from Ti, and forming a wafer contact layer from the one selected among TiN, WN, TaN, W, or Ta on the base layer. SOLUTION: Related to a cathode electrode 6 for wafer plating, Ti is molded into ring shape to form a base layer 8, a part of the molded Ti base layer 8 which does not contact the edge end of a wafer is masked, and a wafer adhesive layer 9 is laminated from the one selected among TiN, WN, TaN, W, or Ta by sputtering. Related to the cathode electrode 6 for wafer plating, the edge and part of wafer is made to contact the wafer adhesive layer 9 with the Ti base layer 8 below, and a plating current is supplied to the wafer through an electrode terminal connected to a supply source.
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