发明名称 Substrate treatment method
摘要 The present invention provides a substrate treatment method to be performed after the steps of forming a desired resist pattern on a substrate and etching thereof, wherein said method comprises steps of: (I) removing the resist pattern on the substrate using a remover solution principally containing a salt derived from hydrofluoric acid and a metal-free base; (II) rinsing said substrate with a lithographic rinsing solution containing a water-soluble organic solvent and water; and (III) washing said substrate with water. According to the present invention, metallic films on the substrate are not corroded in the substrate treatment method, and the method can be performed at a low cost and with a reduced volume of labor for disposal of waste solution used for washing the substrate.
申请公布号 US6068000(A) 申请公布日期 2000.05.30
申请号 US19970891137 申请日期 1997.07.10
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 TANABE, MASAHITO;WAKIYA, KAZUMASA;KOBAYASHI, MASAKAZU;NAKAYAMA, TOSHIMASA
分类号 G03F7/32;G03F7/42;H01L21/02;H01L21/027;H01L21/304;H01L21/3213;(IPC1-7):B08B6/00;H01L21/302 主分类号 G03F7/32
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