发明名称 |
Method of forming conductor shielding to prevent arcing effect during contact implant process |
摘要 |
A method preventing the arcing effect during contact implantation by employing a conductive shielding film within the contact opening in the fabrication of an integrated circuit is described. A dielectric layer is provided overlying a semiconductor substrate of a wafer. The dielectric layer is etched into to provide a contact opening through the dielectric layer to the semiconductor substrate. A conducting layer is deposited overlying the dielectric layer and within the contact opening. A photoresist mask is formed over the conducting layer having an opening above the contact opening. The wafer is placed in an ion implantation chamber wherein the wafer is held by means of an electrostatic chuck. Ions are implanted into the semiconductor substrate through the conducting layer not covered by the photoresist mask wherein some of the ions are trapped on photoresist mask and wherein the conducting layer conducts the trapped ions throughout the wafer thereby preventing charge damage to the dielectric layer.
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申请公布号 |
US6069074(A) |
申请公布日期 |
2000.05.30 |
申请号 |
US19990236490 |
申请日期 |
1999.01.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
FU, CHIANG;HUANG, JUN-YEN;KING, MING CHU;CHEN, CHIEN-CHEN |
分类号 |
H01L21/265;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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